 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 91325C IRL2505 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 0.008 G ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 is universally preferred for all commercialIndustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 104 74 360 200 1.3 16 500 54 20 5.0 55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Juction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 11/19/01 IRL2505 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- --- --- 1.0 59 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.035 --- V/C Reference to 25C, ID = 1mA --- 0.008 VGS = 10V, ID = 54A --- 0.010 VGS = 5.0V, ID = 54A --- 0.013 VGS = 4.0V, ID = 45A --- 2.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 54A --- 25 VDS = 55V, VGS = 0V A --- 250 VDS = 44V, VGS = 0V, T J = 150C --- 100 VGS = 16V nA --- -100 VGS = -16V --- 130 ID = 54A --- 25 nC VDS = 44V --- 67 VGS = 5.0V, See Fig. 6 and 13 12 --- VDD = 28V 160 --- ID = 54A ns 43 --- RG = 1.3, VGS = 5.0V 84 --- RD = 0.50, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 5000 --- VGS = 0V 1100 --- pF VDS = 25V 390 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 104 showing the A G integral reverse --- --- 360 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 54A, VGS = 0V --- 140 210 ns TJ = 25C, IF = 54A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 240H RG = 25, IAS = 54A. (See Figure 12) ISD 54A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 2 www.irf.com IRL2505 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000 ID , D rain-to-S ource C urrent (A ) 100 ID , Drain-to-Source Current (A ) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 2 .5 V 10 10 2 .5 V 2 0 s P U LS E W ID T H T J = 2 5C 0.1 1 10 1 A 1 0.1 1 2 0 s P U LS E W ID TH T J = 1 75 C 10 100 100 A V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 90A T J = 25 C 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , D ra in -to-S ourc e C urrent (A) 2.0 T J = 1 75 C 1.5 1.0 10 0.5 1 2.5 3.5 4.5 V DS= 25V 2 0 s P U LS E W ID TH 5.5 6.5 7.5 A 0.0 -60 -40 -20 0 VGS = 5V 20 40 60 80 100 120 140 160 180 V G S , G ate-to -Sou rce Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2505 10000 8000 C iss 6000 V G S , G a te-to-S ou rc e V o ltag e (V ) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 15 I D = 5 4A V D S = 44 V V D S = 28 V 12 C , Capacitance (pF) 9 4000 C oss 6 2000 C rss A 1 10 100 3 0 0 0 40 80 FO R TE S T CIR C U IT S E E FIG U R E 1 3 120 160 A 200 V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R everse Drain C urrent (A ) O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n ) 10s I D , D rain Current (A ) 100 100 s 100 T J = 17 5C T J = 2 5C 1m s 10 10m s 10 0.4 0.8 1.2 1.6 2.0 V G S = 0V 2.4 A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 100 A 2.8 V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL2505 120 LIMITED BY PACKAGE 100 VGS RG D.U.T. + I D , Drain Current (A) -V DD 80 5.0V 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL2505 1200 L VDS D.U.T. RG + V - DD 5.0 V E A S , S ingle P ulse A valanche E nergy (m J) TO P 1000 B O TTO M ID 22 A 3 8A 54 A 800 IAS tp 0.01 600 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 200 0 V D D = 25 V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL2505 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRL2505 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 8 www.irf.com |
Price & Availability of IRL2505
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |